Tech Library

Electrical and Thermal Response of Silicon Oxycarbide Materials Obtained by Spark Plasma Sintering

In order to obtain dense silicon oxycarbide (SiOC) materials that maintain the properties of glass, non-conventional spark plasma sintering was used to sinter SiOC powders from 1300 to 1700 °C and with 40 MPa of pressure. The concurrence of electrical current, high pressure and low vacuum while the material is being heating produces a dense SiOC-derived material composed of a SiO2 glassy matrix reinforced with SiC nanowires grown in situ, graphene-like carbon and turbostratic graphite. SiOC materials with high electrical and thermal response are obtained as a result of this new processing technique. Electrical resistivity undergoes an extraordinary decrease of five orders of magnitude from 1300 (1.0 × 105 Ω m) to 1700 °C (0.78 Ω m), ranging from insulate to semiconductor material; and thermal conductivity increases by 30%, for these sintering temperatures.

This paper highlights application of the C-Therm TCi Thermal Conductivity Analyzer.


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